AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress. - E. A. Douglas; C. Y. Chang; David J. Cheney; B. P. Gila; Chi-Fai Lo; Liu Lu; M. R. Holzworth; Patrick G. Whiting; Kevin S. Jones; Glen David Via; Jinhyung Kim; Soohwan Jang; et al. (Microelectron. Reliab., 2011)

Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors. - E. A. Douglas; C. Y. Chang; B. P. Gila; M. R. Holzworth; Kevin S. Jones; Lu Liu 011; Jinhyung Kim; Soohwan Jang; Glen David Via; Fan Ren; Stephen J. Pearton (Microelectron. Reliab., 2012)

Enhancement-mode Al045Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistor with p-Al0.3Ga0.7N Gate. - E. A. Douglas; B. A. Klein; A. A. Allerman; Albert G. Baca; T. R. Fortune; A. M. Armstrong (DRC, 2018)

Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition. - Albert G. Baca; B. A. Klein; A. M. Armstrong; A. A. Allerman; E. A. Douglas; T. R. Fortune; R. J. Kaplar (IRPS, 2019)