Influence of temperature on dynamic fault behavior due to resistive defects in FinFET-based SRAMs. - G. Cardoso Medeiros; E. Brum; Leticia Bolzani Poehls; Thiago Copetti; Tiago R. Balen (LATS, 2018)

A Comparative Study Between FinFET and CMOS-Based SRAMs under Resistive Defects. - Thiago Santos Copetti; Tiago R. Balen; E. Brum; C. Aquistapace; Leticia Bolzani Poehls (LATS, 2019)

Evaluating the Impact of Temperature on Dynamic Fault Behaviour of FinFET-Based SRAMs with Resistive Defects. - G. Cardoso Medeiros; E. Brum; Leticia Bolzani Poehls; Thiago Copetti; Tiago R. Balen (J. Electron. Test., 2019)

Comparing the Impact of Power Supply Voltage on CMOS- and FinFET-Based SRAMs in the Presence of Resistive Defects. - Thiago Copetti; Tiago R. Balen; E. Brum; C. Aquistapace; Leticia Bolzani Poehls (J. Electron. Test., 2020)

Evaluating the Impact of Process Variation on RRAMs. - E. Brum; Moritz Fieback; Thiago Santos Copetti; H. Jiayi; Said Hamdioui; Fabian Vargas 001; Letícia Maria Veiras Bolzani (LATS, 2021)

Review of Manufacturing Process Defects and Their Effects on Memristive Devices. - Letícia Maria Veiras Bolzani; Moritz Fieback; Susanne Hoffmann-Eifert; Thiago Copetti; E. Brum; Stephan Menzel; Said Hamdioui; Tobias Gemmeke (J. Electron. Test., 2021)