Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness. - R. Pecheux; R. Kabouche; E. Dogmus; A. Linge; Etienne Okada; M. Zegaoui; Farid Medjdoub (ESSDERC, 2017)

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation. - Carlo De Santi; Matteo Meneghini; Alessandro Caria; E. Dogmus; M. Zegaoui; F. Medjdoub; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2017)