A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. - Merlyne M. De Souza; J. Wang; S. K. Manhas; E. M. Sankara Narayanan; A. S. Oates (Microelectron. Reliab., 2001)

Advances in power semiconductor devices. - Vitezslav Benda; E. M. Sankara Narayanan (Microelectron. J., 2004)

A novel double RESURF LDMOS for HVIC's. - S. Hardikar; Merlyne M. De Souza; Y. Z. Xu; T. J. Pease; E. M. Sankara Narayanan (Microelectron. J., 2004)

Crosstalk in monolithic GaN-on-Silicon power electronic devices. - Vineet Unni; Hiroji Kawai; E. M. Sankara Narayanan (Microelectron. Reliab., 2014)

The world's first high voltage GaN-on-diamond power devices. - Turar Baltynov; Vineet Unni; E. M. Sankara Narayanan (ESSDERC, 2015)

Development of Current Limiting Ultra-Fast Solid-State Circuit Breakers. - Zhongying Wang; E. M. Sankara Narayanan (IECON, 2021)