A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model. - E. Rajalakshmi; N. B. Balamurugan; M. Hemalatha; M. Suguna (Microelectron. J., 2024)

A new quasi-3D analytical framework for channel potential and threshold voltage in triple material gate nanosheet MOSFETs. - E. Rajalakshmi; N. B. Balamurugan; M. Suguna; D. Sriram Kumar (Microelectron. J., 2025)