Reliability of polycrystalline silicon thin film resistors. - M. Nakabayashi; Hidenori Ohyama; Eddy Simoen; M. Ikegami; Cor Claeys; K. Kobayashi; M. Yoneoka; K. Miyahara (Microelectron. Reliab., 2001)

Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation. - Hidenori Ohyama; M. Nakabayashi; Eddy Simoen; Cor Claeys; T. Tanaka; T. Hirao; S. Onada; K. Kobayashi (Microelectron. Reliab., 2001)

Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle. - Hidenori Ohyama; Eddy Simoen; S. Kuroda; Cor Claeys; Y. Takami; T. Hakata; K. Kobayashi; M. Nakabayashi; Hiromi Sunaga (Microelectron. Reliab., 2001)

Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS. - M. Da Rold; Eddy Simoen; Sofie Mertens; Marc Schaekers; G. Badenes; Stefaan Decoutere (Microelectron. Reliab., 2001)

Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation. - Kiyoteru Hayama; Kenichiro Takakura; Hidenori Ohyama; Abdelkarim Mercha; Eddy Simoen; Cor Claeys; Joan Marc Rafí; Michael Kokkoris (Microelectron. Reliab., 2004)

Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. - Kiyoteru Hayama; Kenichiro Takakura; Hidenori Ohyama; S. Kuboyama; S. Matsuda; Joan Marc Rafí; Abdelkarim Mercha; Eddy Simoen; Cor Claeys (Microelectron. Reliab., 2005)

Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. - Paula Ghedini Der Agopian; João Antonio Martino; Eddy Simoen; Cor Claeys (Microelectron. J., 2006)

The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs. - L. M. Camillo; João Antonio Martino; Eddy Simoen; Cor Claeys (Microelectron. J., 2006)

Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. - Kiyoteru Hayama; Kenichiro Takakura; K. Shigaki; Hidenori Ohyama; Joan Marc Rafí; Abdelkarim Mercha; Eddy Simoen; Cor Claeys (Microelectron. Reliab., 2006)

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. - Joan Marc Rafí; Eddy Simoen; Kiyoteru Hayama; Abdelkarim Mercha; Francesca Campabadal; Hidenori Ohyama; Cor Claeys (Microelectron. Reliab., 2006)

Study of the linear kink effect in PD SOI nMOSFETs. - Paula Ghedini Der Agopian; João Antonio Martino; Eddy Simoen; Cor Claeys (Microelectron. J., 2007)

High-temperature performance of state-of-the-art triple-gate transistors. - Kerem Akarvardar; Abdelkarim Mercha; Eddy Simoen; Vaidyanathan Subramanian; Cor Claeys; Pierre Gentil; Sorin Cristoloveanu (Microelectron. Reliab., 2007)

Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks. - Paolo Srinivasan; Felice Crupi; Eddy Simoen; Paolo Magnone; Calogero Pace; Durga Misra; Cor Claeys (Microelectron. Reliab., 2007)

SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors. - Javier Martín-Martínez; Esteve Amat; M. B. González; P. Verheyen; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; Eddy Simoen (Microelectron. Reliab., 2010)

Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs. - Tommaso Romeo; Luigi Pantisano; Eddy Simoen; Raymond Krom; Mitsuhiro Togo; N. Horiguchi; Jérôme Mitard; Aaron Thean; Guido Groeseneken; Cor Claeys; Felice Crupi (ESSDERC, 2012)

On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs. - Eddy Simoen; Marc Aoulaiche; Anabela Veloso; M. Jurczak; Cor Claeys; L. Mendes Almeida; Maria Glória Caño de Andrade; A. Luque Rodriguez; J. A. Jimenez Tejada; Christian Caillat; Pierre Fazan (ESSDERC, 2012)

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs. - Nuria Ayala; Javier Martín-Martínez; Rosana Rodríguez; M. B. González; Montserrat Nafría; Xavier Aymerich; Eddy Simoen (Microelectron. Reliab., 2012)

An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. - Renan Trevisoli Doria; João Antonio Martino; Eddy Simoen; Cor Claeys; Marcelo Antonio Pavanello (Microelectron. Reliab., 2012)

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. - Valeria Kilchytska; Joaquín Alvarado; S. Put; Nadine Collaert; Eddy Simoen; Cor Claeys; Otilia Militaru; Guy Berger; Denis Flandre (Microelectron. Reliab., 2012)

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. - Marc Aoulaiche; Eddy Simoen; Romain Ritzenthaler; Tom Schram; Hiroaki Arimura; Moonju Cho; Thomas Kauerauf; Guido Groeseneken; Naoto Horiguchi; Aaron Thean; Antonio Federico; Felice Crupi; et al. (ESSDERC, 2013)

Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry. - N. Lukyanchikova; N. Garbar; Valeriya Kudina; A. Smolanka; Eddy Simoen; Cor Claeys (Microelectron. Reliab., 2013)

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. - Maria Glória Caño de Andrade; João Antonio Martino; Marc Aoulaiche; Nadine Collaert; Eddy Simoen; Cor Claeys (Microelectron. Reliab., 2014)

Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors. - Eddy Simoen; Alberto Vinicius Oliveira; Anabela Veloso; Adrian Vaisman Chasin; Romain Ritzenthaler; Hans Mertens; Naoto Horiguchi; Cor Claeys (ASICON, 2019)

Analytical modelling and device design optimisation of epitaxial layer-based III-V tunnel FET. - Prabhat Kumar Dubey; Brajesh Kumar Kaushik; Eddy Simoen (IET Circuits Devices Syst., 2019)

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs. - Hao Chang; Longda Zhou; Hong Yang; Zhigang Ji; Qianqian Liu; Eddy Simoen; Huaxiang Yin; Wenwu Wang 006 (IRPS, 2021)

A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies. - Abhitosh Vais; Brent Hsu; Olga Syshchyk; Hao Yu; AliReza Alian; Yves Mols; Komal Vondkar Kodandarama; Bernardette Kunert; Niamh Waldron; Eddy Simoen; Nadine Collaert (IRPS, 2021)

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs. - Longda Zhou; Zhaohao Zhang; Hong Yang; Zhigang Ji; Qianqian Liu; Qingzhu Zhang; Eddy Simoen; Huaxiang Yin; Jun Luo; Anyan Du; Chao Zhao; Wenwu Wang 006 (IRPS, 2021)

Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices. - Carlos H. S. Coelho; João Antonio Martino; Marcello Bellodi; Eddy Simoen; Anabela Veloso; Paula Ghedini Der Agopian (Microelectron. J., 2021)