Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs. - A. Erika Pondigo de los; Edmundo A. Gutiérrez-D.; Joel Molina Reyes; Fernando Guarin (ESSDERC, 2014)

Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al2O3/Al and Al/Al2O3/W structures fabricated on glass at 300 °C. - Joel Molina Reyes; Rene Valderrama; Carlos Zuniga; Pedro Rosales; Wilfrido Calleja Arriaga; Alfonso Torres-Jácome; Francisco Javier de la Hidalga Wade; Edmundo A. Gutiérrez-D. (Microelectron. Reliab., 2014)

Impact of Non-Conducting HCI Degradation on Small-Signal Parameters in RF SOI MOSFET. - Dora A. Chaparro-Ortiz; Alan Y. Otero-Carrascal; Edmundo A. Gutiérrez-D.; Reydezel Torres-Torres; Oscar Huerta-Guevara; P. Srinivasan 002; Fernando Guarin (IRPS, 2023)

Assessing Non-Conducting Off-State Induced Hard Breakdown for PD-SOI MOSFETs using an RF Measurement Technique. - Alan Y. Otero-Carrascal; Dora A. Chaparro-Ortiz; Edmundo A. Gutiérrez-D.; Reydezel Torres-Torres; Oscar Huerta-Gonzalez; P. Srinivasan 002 (IRPS, 2024)

Off-State TDDB Degradation of RC-Features and Threshold Voltage on Advanced FinFETs from RF Measurements for 5G Applications. - Alan Y. Otero-Carrascal; Edmundo A. Gutiérrez-D.; Reydezel Torres-Torres; Oscar Huerta-Gonzalez; P. Srinivasan 002; Héctor Uribe (IRPS, 2025)