Improving and optimizing reliability in future technologies with high-κ dielectrics. - Barry P. Linder; Eduard Cartier; S. Krishnan; Ernest Y. Wu (VLSI-DAT, 2013)

NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation. - P. Srinivasan; J. Fronheiser; S. Siddiqui; A. Kerber; L. F. Edge; Richard G. Southwick; Eduard Cartier (IRPS, 2015)

Electron mobility in thin In0.53Ga0.47As channel. - Eduard Cartier; Atreya Majumdar; K.-T. Lee; Takashi Ando; Martin M. Frank; John Rozen; Keith A. Jenkins; C. Liang; C.-W. Cheng; John Bruley; M. Hopstaken; Pranita Kerber; et al. (ESSDERC, 2017)

PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation. - Eduard Cartier; Martin M. Frank; Takashi Ando; John Rozen; Vijay Narayanan (IRPS, 2018)

Reliability Challenges with Materials for Analog Computing. - Eduard A. Cartier; Wanki Kim; Nanbo Gong; Tayfun Gokmen; Martin M. Frank; Douglas M. Bishop; Youngseok Kim; Seyoung Kim; Takashi Ando; Ernest Y. Wu; Praneet Adusumilli; John Rozen; et al. (IRPS, 2019)