Physical degradation of GaN HEMT devices under high drain bias reliability testing. - S. Y. Park; Carlo Floresca; Uttiya Chowdhury; Jose L. Jimenez; Cathy Lee; Edward Beam; Paul Saunier; Tony Balistreri; Moon J. Kim (Microelectron. Reliab., 2009)

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage. - Jingshan Wang; Lina Cao; Jinqiao Xie; Edward Beam; Chris Youtsey; Robert McCarthy; Louis Guido; Patrick Fay (DRC, 2018)

Integration of Self-Biased Circulators on GaN/SiC for Ka-band RF application. - Yongjie Cui; Yu Cao; Manyam Pilla; Edward Beam; Andy Xie; Cathy Lee; Andrew Ketterson; Michael Roach 003; Anton Geiler; Michael Geiler; Lee Burns; Douglas Linkhart (DRC, 2019)

Microwave Performance of Ferroelectric-Gated GaN HEMTs. - Chunlei Wu; Jeffrey Smith 003; Suman Datta; Yu Cao; Jinqiao Xie; Edward Beam; Patrick Fay (BCICTS, 2020)

Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design. - Brian P. Downey; Andy Xie; Shawn Mack; D. Scott Katzer; James G. Champlain; Yu Cao; Neeraj Nepal; Tyler A. Growden; Vikrant J. Gokhale; Robert L. Coffie; Matthew T. Hardy; Edward Beam; et al. (DRC, 2020)