An experimental comparison of GaN, SiC and Si switching power devices. - Patrick R. Palmer; Xueqiang Zhang; Edward Shelton; Tianqi Zhang; Jin Zhang (IECON, 2017)

Considerations for Controlled Switching of the Power GaN HEMT. - Patrick R. Palmer; Tianqi Zhang; Teng Long; Luke Schillaber; Edward Shelton (ISIE, 2019)

Active Voltage Controlled Switching of the Power GaN HEMT. - Patrick R. Palmer; Jiacheng Wang 003; Edward Shelton (ISIE, 2020)