Reliability studies of SiC vertical power MOSFETs. - Daniel J. Lichtenwalner; Brett Hull; Edward Van Brunt; Shadi Sabri; Donald A. Gajewski; Dave Grider; Scott Allen; John W. Palmour; Akin Akturk; James McGarrity (IRPS, 2018)

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations. - Edward Van Brunt; Daniel J. Lichtenwalner; J. H. Park; Satyaki Ganguly; J. W. McPherson (IRPS, 2023)

High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes. - In-Hwan Ji; Anoop Mathew; Jae-Hyung Park; Neal Oldham; Matthew McCain; Shadi Sabri; Edward Van Brunt; Brett Hull; Daniel J. Lichtenwalner; Donald A. Gajewski; John W. Palmour (IRPS, 2023)