Device and circuit design issues in SOI technology. - Ghavam G. Shahidi; Atul Ajmera; Fariborz Assaderaghi; Ronald J. Bolam; Harold Hovel; Effendi Leobandung; Werner Rausch; Devendra Sadana; Dominic Schepis; Lawrence F. Wagner; Larry Wissel; Kun Wu; et al. (CICC, 1999)

High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width. - Pouya Hashemi; Takashi Ando; Karthik Balakrishnan; John Bruley; Sebastian U. Engelmann; John A. Ott; Vijay Narayanan; D.-G. Park; Renee T. Mo; Effendi Leobandung (VLSIC, 2015)

Electron mobility in thin In0.53Ga0.47As channel. - Eduard Cartier; Atreya Majumdar; K.-T. Lee; Takashi Ando; Martin M. Frank; John Rozen; Keith A. Jenkins; C. Liang; C.-W. Cheng; John Bruley; M. Hopstaken; Pranita Kerber; et al. (ESSDERC, 2017)

Synchronized Analog Capacitor Arrays for Parallel Convolutional Neural Network Training. - Effendi Leobandung; Malte J. Rasch; Y. Li (MWSCAS, 2020)

Multi-Function Multi-Way Analog Technology for Sustainable Machine Intelligence Computation. - Vassilis Kalantzis; Mark S. Squillante; Shashanka Ubaru; Tayfun Gokmen; Chai Wah Wu; Anshul Gupta; Haim Avron; Tomasz Nowicki; Malte J. Rasch; O. Murat Onen; Vanessa López-Marrero; Effendi Leobandung; et al. (CoRR, 2024)