Impact of field cycling on HfO2 based non-volatile memory devices. - Uwe Schroeder; Milan Pesic; Tony Schenk; Halid Mulaosmanovic; Stefan Slesazeck; Johannes Ocker; Claudia Richter; Ekaterina Yurchuk; K. Khullar; Johannes Müller; Patrick Polakowski; E. D. Grimley; et al. (ESSDERC, 2016)