First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec, Ioff<10-7 μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C. - Jih-Chao Chiu; Eknath Sarkar; Yuan-Ming Liu; Yu-Ciao Chen; Yu-Cheng Fan; C. W. Liu (VLSI Technology and Circuits, 2023)

On the Reliability of High-Performance Dual Gate (DG) W-Doped In2O3 FET. - Khandker Akif Aabrar; Hyeonwoo Park; Sharadindu Gopal Kirtania; Eknath Sarkar; Md Abdullah Al Mamun; Sunbin Deng; Chengyang Zhang; Gilbert B. Rayner; Kyeongjae Cho; Suman Datta (VLSI Technology and Circuits, 2024)

Amorphous Oxide Semiconductors for Monolithic 3D Integrated Circuits. - Suman Datta; Eknath Sarkar; Khandker Akif Aabrar; Shan Deng; Jaewon Shin; Arijit Raychowdhury; Shimeng Yu; Asif Khan (VLSI Technology and Circuits, 2024)

Analog In-Memory-Compute with Multi-bit Silicon Ferro FinFET Array for Improved Energy and Area Efficiency. - Eknath Sarkar; Dyutimoy Chakraborty; Wei-Chun Wang; Khandker Akif Aabrar; Sharadindu Gopal Kirtania; Omkar Phadke; Chengyang Zhang; Emmanuel Quezada; Jaewon Shin; Shida Zhang; Asif Islam Khan; Shimeng Yu; et al. (IMW, 2025)

Radiation-Resilient Amorphous Indium Oxide FEFETs for Embedded Nonvolatile Memory. - Sharadindu Gopal Kirtania; Faaiq G. Waqar; Dyutimoy Chakraborty; Jaewon Shin; Eknath Sarkar; Justin Reiss; Jason Dean Yeager; Douglas E. Wolfe; Shimeng Yu; Suman Datta (IRPS, 2025)