A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology. - Erfan Abbasian; Elangovan Mani; Morteza Gholipour; Mehrzad Karamimanesh; Mohd Sahid; Adil Zaidi (Circuits Syst. Signal Process., 2022)

A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM. - Erfan Abbasian; Maryam Nayeri; Elangovan Mani (Circuits Syst. Signal Process., 2024)

A Variation-Tolerant, Stable, Low-Power 6T SRAM Cell in 32-nm CNTFET Technology. - Elangovan Mani; Ahmed Elbarbary; Mohammed A. El-Meligy; Haitham A. Mahmoud (Circuits Syst. Signal Process., 2025)