Calculation of Transport Parameters of SiO2 Polymorphs. - Elena Gnani; Susanna Reggiani; Renato Colle; Massimo Rudan (VLSI Design, 2001)

Automatic 2-D and 3-D simulation of parasitic structures insmart-power integrated circuits. - Elena Gnani; Vincenzo Giudicissi; Radu Vissarion; Claudio Contiero; Massimo Rudan (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2002)

Drain-conductance optimization in nanowire TFETs. - Elena Gnani; Susanna Reggiani; Antonio Gnudi; Giorgio Baccarani (ESSDERC, 2012)

TCAD degradation modeling for LDMOS transistors. - Susanna Reggiani; Gaetano Barone; Elena Gnani; Antonio Gnudi; Stefano Poli; Ming-Yeh Chuang; Weidong Tian; Rick Wise (ESSDERC, 2012)

Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform. - Emanuele Baravelli; Elena Gnani; Roberto Grassi; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2013)

Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. - Giovanni Betti Beneventi; Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2013)

DC and small-signal numerical simulation of graphene base transistor for terahertz operation. - Valerio Di Lecce; Roberto Grassi; Antonio Gnudi; Elena Gnani; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2013)

Gate stack optimization to minimize power consumption in super-lattice fets. - Pasquale Maiorano; Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2013)

Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). - Susanna Reggiani; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Stefano Poli; Rick Wise; Ming-Yeh Chuang; Weidong Tian; Marie Denison (ESSDERC, 2013)

Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs. - Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani (Microelectron. J., 2013)

TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime. - Ilaria Imperiale; Susanna Reggiani; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Luu Nguyen; Marie Denison (ESSDERC, 2014)

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. - Valerio Di Lecce; Roberto Grassi; Antonio Gnudi; Elena Gnani; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2014)

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. - Federico Monti; Susanna Reggiani; Gaetano Barone; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Stefano Poli; Ming-Yeh Chuang; Weidong Tian; Dhanoop Varghese; Rick Wise (ESSDERC, 2014)

A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. - Federica Villani; Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani (ESSDERC, 2014)

Theoretical analyses and modeling for nanoelectronics. - Giorgio Baccarani; Emanuele Baravelli; Elena Gnani; Antonio Gnudi; Susanna Reggiani (ESSDERC, 2015)

TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections. - Stefania Carapezzi; Enrico Caruso; Antonio Gnudi; Susanna Reggiani; Elena Gnani (ESSDERC, 2016)

Performance study of strained III-V materials for ultra-thin body transistor applications. - Martin Rau; Troels Markussen; Enrico Caruso; David Esseni; Elena Gnani; Antonio Gnudi; Petr A. Khomyakov; Mathieu Luisier; Patrik Osgnach; Pierpaolo Palestri; Susanna Reggiani; Andreas Schenk; et al. (ESSDERC, 2016)

A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. - Michele Visciarelli; Antonio Gnudi; Elena Gnani; Susanna Reggiani (ESSDERC, 2016)

3D TCAD modeling of NO2CNT FET sensors. - Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hierold; Antonio Gnudi (ESSDERC, 2018)

Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. - Davide Cornigli; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Giorgio Baccarani; Davide Fabiani; Dhanoop Varghese; Enis Tuncer; S. Krishnan; Luu Nguyen (Microelectron. Reliab., 2018)

TCAD study of DLC coatings for large-area high-power diodes. - Susanna Reggiani; Luigi Balestra; Antonio Gnudi; Elena Gnani; Giorgio Baccarani; J. Dobrzynska; J. Vobecký; C. Tosi (Microelectron. Reliab., 2018)

On the electron mobility of strained InGaAs channel MOSFETs. - Stefania Carapezzi; Susanna Reggiani; Elena Gnani; Antonio Gnudi (ESSDERC, 2019)

TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells. - Laura Zunarelli; Susanna Reggiani; Elena Gnani; Raj Sankaralingam; Mariano Dissegna; Gianluca Boselli (IRPS, 2022)

TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE. - Luigi Balestra; Franco Ercolano; Elena Gnani; Susanna Reggiani (IEEE Access, 2023)