Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. - Isabella Rossetto; Matteo Meneghini; Eleonora Canato; Marco Barbato; Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Andrea Natale Tallarico; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2017)

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. - Arno Stockman; Eleonora Canato; Alaleh Tajalli; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Peter Moens; Benoit Bakeroot (IRPS, 2018)

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. - Alaleh Tajalli; Eleonora Canato; Arianna Nardo; Matteo Meneghini; Arno Stockman; Peter Moens; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2018)

µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. - Eleonora Canato; Fabrizio Masin; Matteo Borga; Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Arno Stockman; Abhishek Banerjee 003; Peter Moens (IRPS, 2019)

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. - Fabrizio Masin; Matteo Meneghini; Eleonora Canato; Alessandro Barbato; Carlo De Santi; Arno Stockman; Abhishek Banerjee 003; Peter Moens; Enrico Zanoni; Gaudenzio Meneghesso (IRPS, 2020)

Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate. - Riccardo Fraccaroli; Matteo Dell'Andrea; Manuel Fregolent; Mirco Boito; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Eleonora Canato; Isabella Rossetto; Alessio Pirani; Giansalvo Pizzo; Cristina Miccoli; et al. (IRPS, 2025)