Extraction noise transport time (τ) and its impact over the four noise parameters of advanced SiGe HBT. - L. F. Luis-Pineda; Eloy Ramírez-García; Nicolas Zerounian; Frédéric Aniel; Mauro A. Enciso Aguilar (CCE, 2012)

Exploiting the ambipolarity in emerging transistors for high-frequency applications. - Anibal Pacheco-Sanchez; Javier Noé Ramos-Silva; Nikolaos Mavredakis; Eloy Ramírez-García; David Jiménez (DCIS, 2022)

Design of GFET-based active modulators leveraging device performance reproducibility conditions. - Anibal Pacheco-Sanchez; Javier Noé Ramos-Silva; Nikolaos Mavredakis; Eloy Ramírez-García; David Jiménez (DCIS, 2023)