Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. - François Andrieu; Mikaël Cassé; E. Baylac; P. Perreau; O. Nier; Denis Rideau; R. Berthelon; Franck Pourchon; A. Pofelski; Barbara De Salvo; C. Gallon; Vincent Mazzocchi; et al. (ESSDERC, 2014)

Static and dynamic power management in 14nm FDSOI technology. - Olivier Weber; Emmanuel Josse; J. Mazurier; Michel Haond (ICICDT, 2015)

New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs. - Christoforos G. Theodorou; Eleftherios G. Ioannidis; Sébastien Haendler; Nicolas Planes; Emmanuel Josse; Charalambos A. Dimitriadis; Gérard Ghibaudo (IRPS, 2015)

Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration. - R. Berthelon; François Andrieu; P. Perreau; E. Baylac; A. Pofelski; Emmanuel Josse; Didier Dutartre; A. Claverie; Michel Haond (ESSDERC, 2016)

Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs. - Krishna Pradeep; Theano A. Karatsori; Thierry Poiroux; Andre Juge; Patrick Scheer; Gilles Gouget; Emmanuel Josse; Gérard Ghibaudo (ESSDERC, 2018)