Comparison of variability of HCI induced drift for SiON and HKMG devices. - Xavier Federspiel; Cheikh Diouf; Florian Cacho; Emmanuel Vincent 004 (IRPS, 2020)

Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K. - Lauriane Contamin; Mikaël Cassé; Xavier Garros; Fred Gaillard; Maud Vinet; Philippe Galy; André Juge; Emmanuel Vincent 004; Silvano De Franceschi; Tristan Meunier (IRPS, 2022)