Practical considerations in the design of SRAM cells on SOI. - Wei He; Zheng-xuan Zhang; En-xia Zhang; Wenjie Yu; Hao Tian; Xi Wang (Microelectron. J., 2008)

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. - R. Arinero; En-xia Zhang; Nadia Rezzak; Ronald D. Schrimpf; Daniel M. Fleetwood; B. K. Choï; A. B. Hmelo; Julien Mekki; Antoine D. Touboul; Frédéric Saigné (Microelectron. Reliab., 2011)

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. - Tania Roy; Yevgeniy S. Puzyrev; En-xia Zhang; Sandeepan DasGupta; Sarah A. Francis; Daniel M. Fleetwood; Ronald D. Schrimpf; Umesh K. Mishra; Jim S. Speck; Sokrates T. Pantelides (Microelectron. Reliab., 2011)

Total-ionizing-dose effects and reliability of carbon nanotube FET devices. - Cher Xuan Zhang; En-xia Zhang; Daniel M. Fleetwood; Michael L. Alles; Ronald D. Schrimpf; Chris Rutherglen; Kosmas Galatsis (Microelectron. Reliab., 2014)

Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs. - A. Sasikumar; Z. Zhang; P. Kumar; En-xia Zhang; Daniel M. Fleetwood; Ronald D. Schrimpf; Paul Saunier; Cathy Lee; S. A. Ringel; Aaron R. Arehart (IRPS, 2015)

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. - Peng Wang; En-xia Zhang; Daniel M. Fleetwood; Peng Fei Wang; Michael W. McCurdy; Ji-Tzouh Lin; Michael L. Alles; Jim L. Davidson; Bruce W. Alphenaar; Ronald D. Schrimpf (ASICON, 2021)

Single-Event Burnout by Cf-252 Irradiation in Vertical $ beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. - Sajal Islam; Aditha S. Senarath; Arijit Sengupta; En-xia Zhang; Dennis R. Ball; Daniel M. Fleetwood; Ronald D. Schrimpf; Esmat Farzana; Arkka Bhattacharyya; Nolan S. Hendricks; James S. Speck (DRC, 2023)

Charge Trapping in Irradiated 3D Devices and ICs (Invited). - En-xia Zhang; Shintaro Toguchi; Zi Xiang Guo; Michael L. Alles; Ronald D. Schrimpf; Daniel M. Fleetwood (IRPS, 2024)