A New Field-assisted Access Scheme of STT-RAM with Self-reference Capability. - Enes Eken; Yaojun Zhang; Wujie Wen; Rajiv V. Joshi; Hai Li 001; Yiran Chen 001 (DAC, 2014)

Recent progresses of STT memory design and applications. - Bonan Yan; Yaojun Zhang; Enes Eken; Wujie Wen; Weisheng Zhao; Yiran Chen 001 (ASICON, 2015)

NVSim-VXs: an improved NVSim for variation aware STT-RAM simulation. - Enes Eken; Linghao Song; Ismail Bayram; Cong Xu 002; Wujie Wen; Yuan Xie 001; Yiran Chen 001 (DAC, 2016)

Sliding Basket: An adaptive ECC scheme for runtime write failure suppression of STT-RAM cache. - Xue Wang; Mengjie Mao; Enes Eken; Wujie Wen; Hai Li 001; Yiran Chen 001 (DATE, 2016)

Modeling STT-RAM fabrication cost and impacts in NVSim. - Ismail Bayram; Enes Eken; Donald Kline Jr.; Nikolas Parshook; Yiran Chen 001; Alex K. Jones (IGSC, 2016)

Adaptive refreshing and read voltage control scheme for FeDRAM. - Ismail Bayram; Enes Eken; Xue Wang; Xiao Sun 013; T. P. Ma; Yiran Chen 001 (ISCAS, 2016)

Spin-Hall Assisted STT-RAM Design and Discussion. - Enes Eken; Ismail Bayram; Yaojun Zhang; Bonan Yan; Wenqing Wu; Hai (Helen) Li; Yiran Chen 001 (SLIP, 2016)

Recent Technology Advances of Emerging Memories. - Yiran Chen 001; Hai Helen Li; Ismail Bayram; Enes Eken (IEEE Des. Test, 2017)

Giant Spin-Hall assisted STT-RAM and logic design. - Enes Eken; Ismail Bayram; Yaojun Zhang; Bonan Yan; Wenqing Wu; Hai (Helen) Li; Yiran Chen 001 (Integr., 2017)

Modeling of biaxial magnetic tunneling junction for multi-level cell STT-RAM realization. - Enes Eken; Ismail Bayram; Hai Helen Li; Yiran Chen 001 (ASP-DAC, 2018)

Determining overfitting and underfitting in generative adversarial networks using Fréchet distance. - Enes Eken (Turkish J. Electr. Eng. Comput. Sci., 2021)

Using subspaces of weight matrix for evaluating generative adversarial networks with Fréchet distance. - Enes Eken (Concurr. Comput. Pract. Exp., 2022)

Content loss and conditional space relationship in conditional generative adversarial networks. - Enes Eken (Turkish J. Electr. Eng. Comput. Sci., 2022)