Two-Dimensional Numerical Analysis of Latchup in a VLSI CMOS Technology. - Enrico Sangiorgi; Mark R. Pinto; Stanley E. Swirhun; Robert W. Dutton (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1985)

MOS2: an efficient MOnte Carlo Simulator for MOS devices. - Enrico Sangiorgi; Bruno Riccò; Franco Venturi (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1988)

A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs. - Franco Venturi; R. Kent Smith; Enrico Sangiorgi; Mark R. Pinto; Bruno Riccò (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1989)

Latch-up in CMOS circuits: A review. - Enrico Sangiorgi (Eur. Trans. Telecommun., 1990)

Latch-up testing in CMOS IC's. - Roberto Menozzi; Massimo Lanzoni; Claudio Fiegna; Enrico Sangiorgi; Bruno Riccò (IEEE J. Solid State Circuits, 1990)

Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's. - Franco Venturi; Enrico Sangiorgi; Rossella Brunetti; Wolfgang Quade; Carlo Jacoboni; Bruno Riccò (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1991)

A numerical method to compute isotropic band models from anisotropic semiconductor band structures. - Antonio Abramo; Franco Venturi; Enrico Sangiorgi; Jack M. Higman; Bruno Riccò (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993)

The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs. - Enrico Sangiorgi; Pierpaolo Palestri; David Esseni; Claudio Fiegna; Luca Selmi (ESSCIRC, 2007)

A methodology to account for the finger interruptions in solar cell performance. - Raffaele De Rose; Antonio Malomo; Paolo Magnone; Felice Crupi; Giorgio Cellere; Marco Martire; Diego Tonini; Enrico Sangiorgi (Microelectron. Reliab., 2012)

Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models. - Muthupandian Cheralathan; Esteban Contreras; Joaquín Alvarado; Antonio Cerdeira; Giuseppe Iannaccone; Enrico Sangiorgi; Benjamín Iñíguez (Microelectron. J., 2013)

Doing a Lot with a Little: Micropower Conversion and Management for Ambient-Powered Electronics. - Aldo Romani; Marco Tartagni; Enrico Sangiorgi (Computer, 2017)

Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. - Andrea Natale Tallarico; Susanna Reggiani; Paolo Magnone; Giuseppe Croce; Riccardo Depetro; P. Gattari; Enrico Sangiorgi; Claudio Fiegna (Microelectron. Reliab., 2017)

Optimum Design Rules for CMOS Hall Sensors. - Marco Crescentini; Michele Biondi; Aldo Romani; Marco Tartagni; Enrico Sangiorgi (Sensors, 2017)

TCAD investigation on hot-electron injection in new-generation technologies. - Susanna Reggiani; Mattia Rossetti; Antonio Gnudi; Andrea Natale Tallarico; Antonio Molfese; Stefano Manzini; Riccardo Depetro; Giuseppe Croce; Enrico Sangiorgi; Claudio Fiegna (Microelectron. Reliab., 2018)

Characterization and Modeling of BTI in SiC MOSFETs. - Davide Cornigli; Andrea Natale Tallarico; Susanna Reggiani; Claudio Fiegna; Enrico Sangiorgi; Luis Sanchez; Carlos Valdivieso; Giuseppe Consentino; Felice Crupi (ESSDERC, 2019)

TCAD predictions of hot-electron injection in p-type LDMOS transistors. - Federico Giuliano; Riccardo Depetro; Giuseppe Croce; Andrea Natale Tallarico; Susanna Reggiani; Antonio Gnudi; Enrico Sangiorgi; Claudio Fiegna; Mattia Rossetti; Antonio Molfese; Stefano Manzini (ESSDERC, 2019)

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. - Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot; Andrea Natale Tallarico; Enrico Sangiorgi; Claudio Fiegna; J. Zheng; X. Ma; Matteo Borga; Elena Fabris; Matteo Meneghini; et al. (IRPS, 2019)

Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors. - Andrea Natale Tallarico; Susanna Reggiani; Riccardo Depetro; Giuseppe Croce; Enrico Sangiorgi; Claudio Fiegna (IRPS, 2020)

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. - M. Millesimo; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Claudio Fiegna; Andrea Natale Tallarico (IRPS, 2022)

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. - M. Millesimo; Claudio Fiegna; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Andrea Natale Tallarico (IRPS, 2024)

RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature. - M. Millesimo; L. Valentini; Claudio Fiegna; Enrico Sangiorgi; Andrea Natale Tallarico; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot (IRPS, 2025)

HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack. - Andrea Natale Tallarico; M. Millesimo; U. Ibrar; Enrico Sangiorgi; Claudio Fiegna; T.-Y. Yang; J.-S. Wu; H. Iwai; E.-Y. Chang (IRPS, 2025)