Enrique Miranda
Orcid: 0000-0003-0470-5318Affiliations:
- Autonomous University of Barcelona, Spain
According to our database1,
Enrique Miranda
authored at least 31 papers
between 2002 and 2023.
Collaborative distances:
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Bibliography
2023
2022
Neural Networks, 2022
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022
2021
Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition.
Proceedings of the 12th IEEE Latin America Symposium on Circuits and System, 2021
2020
Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition.
IEEE Access, 2020
Proceedings of the 28th European Signal Processing Conference, 2020
2018
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory.
Microelectron. Reliab., 2018
SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions.
Int. J. Circuit Theory Appl., 2018
2017
Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2017
Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis.
Microelectron. Reliab., 2017
Equivalent circuit model for the electron transport in 2D resistive switching material systems.
Proceedings of the 47th European Solid-State Device Research Conference, 2017
2015
Electrical characterization of multiple leakage current paths in HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>-based nanolaminates.
Microelectron. Reliab., 2015
Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films.
Microelectron. Reliab., 2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effects.
Proceedings of the 45th European Solid State Device Research Conference, 2015
2014
Single-parameter model for the post-breakdown conduction characteristics of HoTiO<sub>x</sub>-based MIM capacitors.
Microelectron. Reliab., 2014
2013
Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress.
Microelectron. Reliab., 2013
Microelectron. Reliab., 2013
2012
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.
Microelectron. Reliab., 2012
2011
An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown.
Microelectron. Reliab., 2011
Proceedings of EUROCON 2011, 2011
2010
Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics.
Microelectron. Reliab., 2010
Effect of the Electric Discharge Confinement on the Perforation Density of Porous Materials.
Proceedings of the Annual Meeting of the IEEE Industry Applications Society, 2010
2009
Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks.
Microelectron. Reliab., 2009
2008
Compact modeling of the non-linear post-breakdown current in thin gate oxides using the generalized diode equation.
Microelectron. Reliab., 2008
2005
Microelectron. Reliab., 2005
Degradation of high-K LA<sub>2</sub>O<sub>3</sub> gate dielectrics using progressive electrical stress.
Microelectron. Reliab., 2005
A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures.
Microelectron. Reliab., 2005
2004
Electron transport through broken down ultra-thin SiO<sub>2</sub> layers in MOS devices.
Microelectron. Reliab., 2004
Microelectron. Reliab., 2004
2002
Modeling of the I-V characteristics of high-field stressed MOS structures using a Fowler-Nordheim-type tunneling expression.
Microelectron. Reliab., 2002