Modeling of the I-V characteristics of high-field stressed MOS structures using a Fowler-Nordheim-type tunneling expression. - Enrique Miranda 002; Gabriel Redin; Adrián Faigón (Microelectron. Reliab., 2002)

Single-equation model for low and high voltage soft breakdown conduction. - Enrique Miranda 002; E. Mallaina (Microelectron. Reliab., 2004)

Electron transport through broken down ultra-thin SiO2 layers in MOS devices. - Enrique Miranda 002; Jordi Suñé (Microelectron. Reliab., 2004)

A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures. - Enrique Miranda 002; B. Brandala (Microelectron. Reliab., 2005)

Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress. - Enrique Miranda 002; Joel Molina Reyes; Y. Kim; Hiroshi Iwai (Microelectron. Reliab., 2005)

The TDDB power-law model - Physics and experimental evidences. - Rolf-Peter Vollertsen; Enrique Miranda 002 (Microelectron. Reliab., 2005)

Compact modeling of the non-linear post-breakdown current in thin gate oxides using the generalized diode equation. - Enrique Miranda 002 (Microelectron. Reliab., 2008)

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. - Enrique Miranda 002; Javier Martín-Martínez; Eamon O'Connor; G. Hughes; P. Casey; Karim Cherkaoui; S. Monaghan; R. Long; D. O'Connell; Paul K. Hurley (Microelectron. Reliab., 2009)

Effect of the Electric Discharge Confinement on the Perforation Density of Porous Materials. - Joan J. Garcia-Garcia; Enrique Miranda 002; Carolina Garzon; Cynthia S. Martinez-Cisneros; Julian Alonso (IAS, 2010)

Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics. - Enrique Miranda 002; Eamon O'Connor; Paul K. Hurley (Microelectron. Reliab., 2010)

Industrial electrostatics perforation improvement by power controlled discharges. - Carolina Garzon; Enrique Miranda 002; Cynthia S. Martinez-Cisneros; Julian Alonso; Joan J. Garcia-Garcia (EUROCON, 2011)

An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown. - Enrique Miranda 002; C. Mahata; Tanmoy Das; Chinmay K. Maiti (Microelectron. Reliab., 2011)

Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown. - Enrique Miranda 002; Takamasa Kawanago; Kuniyuki Kakushima; Jordi Suñé; Hiroshi Iwai (Microelectron. Reliab., 2012)

Field-effect control of breakdown paths in HfO2 based MIM structures. - X. Saura; X. Lian; David Jiménez; Enrique Miranda 002; Xavier Borrisé; Francesca Campabadal; Jordi Suñé (Microelectron. Reliab., 2013)

Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress. - X. Saura; D. Moix; Jordi Suñé; Paul K. Hurley; Enrique Miranda 002 (Microelectron. Reliab., 2013)

Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors. - Juli Blasco; Helena Castán; Héctor García; Salvador Dueñas; Jordi Suñé; Marianna Kemell; Kaupo Kukli; Mikko Ritala; Markku Leskelä; Enrique Miranda 002 (Microelectron. Reliab., 2014)

Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effects. - Juli Blasco; Jordi Suñé; Enrique Miranda 002 (ESSDERC, 2015)

Threading dislocations in III-V semiconductors: Analysis of electrical conduction. - Violaine Iglesias 002; Marc Porti; Carlos Couso; Q. Wu; S. Claramunt; Montserrat Nafría; Enrique Miranda 002; Neus Domingo; Gennadi Bersuker; Aaron Cordes (IRPS, 2015)

Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films. - Juli Blasco; Nestor Fabian Ghenzi; Jordi Suñé; Pablo Levy; Enrique Miranda 002 (Microelectron. Reliab., 2015)

Electrical characterization of multiple leakage current paths in HfO2/Al2O3-based nanolaminates. - Alberto Rodriguez-Fernandez; M. B. González; Francesca Campabadal; Jordi Suñé; Enrique Miranda 002 (Microelectron. Reliab., 2015)

Equivalent circuit model for the electron transport in 2D resistive switching material systems. - Enrique Miranda 002; Jordi Suñé; Chengbin Pan; Marco A. Villena; Na Xiao; Mario Lanza (ESSDERC, 2017)

Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis. - Alberto Rodriguez-Fernandez; Carlo Cagli; Luca Perniola; Jordi Suñé; Enrique Miranda 002 (Microelectron. Reliab., 2017)

Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications. - German Agustin Patterson; Jordi Suñé; Enrique Miranda 002 (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2017)

Device variability tolerance of a RRAM-based self-organizing neuromorphic system. - Marta Pedro; Javier Martín-Martínez; Enrique Miranda 002; Rosana Rodríguez; Montserrat Nafría; M. B. González; Francesca Campabadal (IRPS, 2018)

SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions. - German Agustin Patterson; Jordi Suñé; Enrique Miranda 002 (Int. J. Circuit Theory Appl., 2018)

A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory. - Alberto Rodriguez-Fernandez; J. Muñoz-Gorriz; Jordi Suñé; Enrique Miranda 002 (Microelectron. Reliab., 2018)

Offline Training for Memristor-based Neural Networks. - Guillem Boquet; Edwar Macias Toro; Antoni Morell; Javier Serrano 001; Enrique Miranda 002; José López Vicario (EUSIPCO, 2020)

Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition. - Fernando Leonel Aguirre; Sebastián Matías Pazos; Felix Palumbo; Jordi Suñé; Enrique Miranda 002 (IEEE Access, 2020)

Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition. - Fernando L. Aguirre; Sebastián Matías Pazos; Felix Palumbo; N. Gomez; Enrique Miranda 002; Jordi Suñé (LASCAS, 2021)

Beneficial Role of Noise in Hf-based Memristors. - Rosana Rodríguez; Javier Martín-Martínez; Emili Salvador Aguilera; Albert Crespo-Yepes; Enrique Miranda 002; Montserrat Nafría; Antonio Rubio 001; Vasileios G. Ntinas; Georgios Ch. Sirakoulis (ISCAS, 2022)

Connectome of memristive nanowire networks through graph theory. - Gianluca Milano; Enrique Miranda 002; Carlo Ricciardi (Neural Networks, 2022)

Variability in Resistive Memories. - Juan Bautista Roldán; Enrique Miranda 002; David Maldonado; Alexey N. Mikhaylov; Nikolay V. Agudov; Alexander A. Dubkov; Maria N. Koryazhkina; Mireia Bargallo González; Marco A. Villena; Samuel Poblador; Mercedes Saludes-Tapia; Rodrigo Picos; et al. (Adv. Intell. Syst., 2023)

Memristive Model of a Sb2Se3 Solar Cell. - Didac Vega; Rodrigo Picos; Angel Rodríguez; Yash Gupta; Oscar Camps; Edgardo Saucedo; Carola de Benito; Jordi Llorca; Stavros G. Stavrinides; Enrique Miranda 002 (ICICDT, 2025)

Simulation Study of the Maximum Power Dissipation-Energy Consumption Dilemma in Memristors Using the Dynamic Memdiode Model. - Enrique Miranda 002; E. Piros; Fernando L. Aguirre; X. Pérez; T. Kim; J. P. Schreyer; Jonas Gehrunger; T. Oster; Klaus Hofmann; Jordi Suñé; Christian Hochberger; L. Alff (SMACD, 2025)

Reliability Assessment of Optical Physical Unclonable Functions Based on the Spatial Distribution of Catastrophic Failure Sites in MIM Structures. - Marc Porti; Alvaro Solis; Alex Calatayud; Montserrat Nafría; Enrique Miranda 002 (IEEE Access, 2025)