SiGe BiCMOS Trends - Today and Tomorrow. - James S. Dunn; David L. Harame; Alvin J. Joseph; Stephen A. St. Onge; Natalie B. Feilchenfeld; Louis D. Lanzerotti; Bradley A. Orner; Ephrem G. Gebreselasie; Jeffrey B. Johnson; Douglas D. Coolbaugh; Rick Rassel; Marwan Khater (CICC, 2006)

Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications. - Alvin J. Joseph; John D. Gillis; Mark Doherty; Peter J. Lindgren; Rosemary A. Previti-Kelly; Ramana M. Malladi; Ping-Chuan Wang; Mete Erturk; Hanyi Ding; Ephrem G. Gebreselasie; Michael J. McPartlin; James S. Dunn (IBM J. Res. Dev., 2008)

Ballast Resistor Temperature Effect and Ruggedness. - Yves Ngu; Ephrem G. Gebreselasie; Rajendran Krishnasamy; Rick Rassel (BCICTS, 2019)

Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTs. - Dimitris P. Ioannou; Ephrem G. Gebreselasie; Vinh Pham; Uppili S. Raghunathan (BCICTS, 2023)