Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications. - Erfan Abbasian; Morteza Gholipour (Int. J. Circuit Theory Appl., 2021)

Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design. - Erfan Abbasian; Morteza Gholipour; Farzaneh Izadinasab (Int. J. Circuit Theory Appl., 2021)

Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications. - Erfan Abbasian; Morteza Gholipour (Circuits Syst. Signal Process., 2022)

A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology. - Erfan Abbasian; Elangovan Mani; Morteza Gholipour; Mehrzad Karamimanesh; Mohd Sahid; Adil Zaidi (Circuits Syst. Signal Process., 2022)

Design and investigation of stability- and power-improved 11T SRAM cell for low-power devices. - Erfan Abbasian; Shilpi Birla; Emad Mojaveri Moslem (Int. J. Circuit Theory Appl., 2022)

A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications. - Erfan Abbasian; Morteza Gholipour (Int. J. Circuit Theory Appl., 2022)

Improved read/write assist mechanism for 10-transistor static random access memory cell. - Erfan Abbasian; Morteza Gholipour (Int. J. Circuit Theory Appl., 2022)

Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM. - Erfan Abbasian; Shilpi Birla; Morteza Gholipour (Microelectron. J., 2022)

A Highly Stable Low-Energy 10T SRAM for Near-Threshold Operation. - Erfan Abbasian (IEEE Trans. Circuits Syst. I Regul. Pap., 2022)

A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins. - Erfan Abbasian; Farzaneh Izadinasab; Morteza Gholipour (IEEE Trans. Circuits Syst. I Regul. Pap., 2022)

Design of a 10-nm FinFET 11 T Near-Threshold SRAM Cell for Low-Energy Internet-of-Things Applications. - Erfan Abbasian; Bahare Grailoo; Mahdieh Nayeri (Circuits Syst. Signal Process., 2023)

Energy-Efficient Single-Ended Read/Write 10T Near-Threshold SRAM. - Erfan Abbasian; Sobhan Sofimowloodi (IEEE Trans. Circuits Syst. I Regul. Pap., 2023)

An ultra-low power and energy-efficient ternary Half-Adder based on unary operators and two ternary 3:1 multiplexers in 32-nm GNRFET technology. - Erfan Abbasian; Maedeh Orouji; Sana Taghipour Anvari; Alireza Asadi; Ehsan Mahmoodi (Int. J. Circuit Theory Appl., 2023)

A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM. - Erfan Abbasian; Maryam Nayeri; Elangovan Mani (Circuits Syst. Signal Process., 2024)

A Soft Error Self-Resilience Radiation-Hardened 14T SRAM for Aerospace Applications. - Guguloth Anjaneyulu; Asisa Kumar Panigrahy; Mukku Pavan Kumar; Shams-Ul-Haq; Abdolreza Darabi; Erfan Abbasian; Priyanka Sharma; M. Durga Prakash (IEEE Access, 2025)

Schmitt Trigger-Based Low Leakage and Half-Select Free Near-Threshold 10T SRAM Architecture. - Appikatla Phani Kumar; Rohit Lorenzo; Erfan Abbasian; Ashish Sachdeva (J. Circuits Syst. Comput., 2025)