A gate Modulated avalanche bipolar transistor in 130nm CMOS technology. - Robert K. Henderson; Eric A. G. Webster; Richard Walker 004 (ESSDERC, 2012)

A silicon photomultiplier with >30% detection efficiency from 450-750nm and 11.6μm pitch NMOS-only pixel with 21.6% fill factor in 130nm CMOS. - Eric A. G. Webster; Richard J. Walker; Robert K. Henderson; Lindsay Grant (ESSDERC, 2012)