Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs. - Chaymaa Haloui; Gaëtan Toulon; Josiane Tasselli; Yvon Cordier; Éric Frayssinet; Karine Isoird; Frédéric Morancho; Mathieu Gavelle (MIXDES, 2020)

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. - P. Vigneshwara Raja; Christophe Raynaud; Camille Sonneville; Atse Julien Eric N'Dohi; Hervé Morel; Luong-Viêt Phung; Thi Huong Ngo; Philippe De Mierry; Éric Frayssinet; Hassan Maher; Josiane Tasselli; Karine Isoird; et al. (Microelectron. J., 2022)