On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations. - Boubacar Traore; Elisa Vianello; Gabriel Molas; Marc Gely; Jean-François Nodin; Eric Jalaguier; Philippe Blaise; Barbara De Salvo; Leonardo R. C. Fonseca; Kanhao Xue; Yoshio Nishi (ESSDERC, 2013)

Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design. - Elisa Vianello; Olivier Thomas; M. Harrand; Santhosh Onkaraiah; T. Cabout; Boubacar Traore; T. Diokh; Houcine Oucheikh; Luca Perniola; Gabriel Molas; Philippe Blaise; J.-F. Nodin; et al. (ICICDT, 2013)

Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization. - M. Azzaz; A. Benoist; Elisa Vianello; Daniele Garbin; Eric Jalaguier; Carlo Cagli; C. Charpin; Stefania Bernasconi; Simon Jeannot; T. Dewolf; G. Audoit; C. Guedj; et al. (ESSDERC, 2015)

Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. - M. Barlas; Boubacar Traore; Laurent Grenouillet; Stefania Bernasconi; Philippe Blaise; Mouhamad Alayan; Benoit Sklénard; Eric Jalaguier; Philippe Rodriguez; F. Mazen; E. Vilain; M. Guillermet; et al. (ESSDERC, 2016)