A 576 K 3.5-ns access BiCMOS ECL static RAM with array built-in self-test. - Henry A. Bonges III; R. Dean Adams; Archibald J. Allen; Roy Flaker; Kenneth S. Gray; Erik L. Hedberg; W. Timothy Holman; George M. Lattimore; David A. Lavalette; Kim Yen T. Nguyen; Alan L. Roberts (IEEE J. Solid State Circuits, 1992)

Multipurpose DRAM architecture for optimal power, performance, and product flexibility. - Wayne F. Ellis; John E. Barth Jr.; Sri Divakaruni; Jeffrey H. Dreibelbis; Anatol Furman; Erik L. Hedberg; Hsing-San Lee; Thomas M. Maffitt; Christopher P. Miller; Charles H. Stapper; Howard L. Kalter (IBM J. Res. Dev., 1995)

Study of Train-Side Passive Magnetic Measurements with Applications to Train Localization. - Oliver Heirich; Benjamin Siebler; Erik L. Hedberg (J. Sensors, 2017)