CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics. - Ernest Y. Wu; Edward J. Nowak; Alex Vayshenker; Wing L. Lai; David L. Harmon (IBM J. Res. Dev., 2002)

Statistics of soft and hard breakdown in thin SiO2 gate oxides. - Jordi Suñé; Ernest Y. Wu; David Jiménez; Wing L. Lai (Microelectron. Reliab., 2003)

Critical reliability challenges in scaling SiO2-based dielectric to its limit. - Ernest Y. Wu; Jordi Suñé; Wing L. Lai; Alex Vayshenker; Edward J. Nowak; David L. Harmon (Microelectron. Reliab., 2003)

Voltage acceleration and t63.2 of 1.6-10 nm gate oxides. - Rolf-Peter Vollertsen; Ernest Y. Wu (Microelectron. Reliab., 2004)

Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability. - Ernest Y. Wu; Jordi Suñé (Microelectron. Reliab., 2005)

Improving and optimizing reliability in future technologies with high-κ dielectrics. - Barry P. Linder; Eduard Cartier; S. Krishnan; Ernest Y. Wu (VLSI-DAT, 2013)

A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL). - Ernest Y. Wu; James H. Stathis; Baozhen Li; Barry P. Linder; Kai Zhao; Griselda Bonilla (IRPS, 2015)

Elapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications. - Ernest Y. Wu; Andrew Kim; Baozhen Li; James H. Stathis (IRPS, 2018)

Reliability Challenges with Materials for Analog Computing. - Eduard A. Cartier; Wanki Kim; Nanbo Gong; Tayfun Gokmen; Martin M. Frank; Douglas M. Bishop; Youngseok Kim; Seyoung Kim; Takashi Ando; Ernest Y. Wu; Praneet Adusumilli; John Rozen; et al. (IRPS, 2019)

Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD. - Andrew Kim; Ernest Y. Wu; Baozhen Li; Barry P. Linder (IRPS, 2019)

Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL Applications. - Ernest Y. Wu; Baozhen Li; James H. Stathis; Andrew Kim (IRPS, 2019)

TDDB Reliability in Gate-All-Around Nanosheet. - Huimei Zhou; Miaomiao Wang 006; Ruqiang Bao; Tian Shen; Ernest Y. Wu; Richard G. Southwick; Jingyun Zhang; Veeraraghavan S. Basker; Dechao Guo (IRPS, 2021)

Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation. - Franco Stellari; Ernest Y. Wu; Martin M. Frank; Leonidas E. Ocala; Takashi Ando; Peilin Song (ESSDERC, 2022)

A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation. - Ernest Y. Wu; Ron Bolam; Baozhen Li; Tian Shen; Barry P. Linder; Griselda Bonilla; Miaomiao Wang 006; Dechao Guo (IRPS, 2022)

Quantum Mechanical Connection of Schottky Emission Process and Its implications on Breakdown Methodology and Conduction Modeling for BEOL Low-k Dielectrics. - Ernest Y. Wu; Baozhen Li (IRPS, 2022)

General Statistical Model for Dielectric Breakdown Including Reverse Area Scaling - The Role of Area-Dependent Dynamic Competition. - Ernest Y. Wu; Takashi Ando; Paul Jamison (IRPS, 2024)

A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction. - Ernest Y. Wu; Brian T. McGowan; Ronald Bolam; Huai Huang; Huimei Zhou; Miaomiao Wang 006 (IRPS, 2024)

Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling. - Huimei Zhou; Miaomiao Wang 006; Ernest Y. Wu (IRPS, 2024)

Modulating Competition between Defect Generation and Annihilation in Dielectric Breakdown Showing a Full Range of Reverse, Diminishing, and Forward Area Scaling Trends. - Ernest Y. Wu; Paul Jamison; Steven Consiglio; Takaaki Tsunomura; Takashi Ando (IRPS, 2025)

A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO2 and its Comparison with 2D Gate Dielectrics. - Ernest Y. Wu; Richard G. Southwick; Baozhen Li (IRPS, 2025)