Reliability Investigation of Gallium Nitride HEMT. - A. Sozza; Christian Dua; Erwan Morvan; Bertrand Grimbert; V. Hoel; Sylvain L. Delage; N. Chaturvedi; Richard Lossy; Joachim Würfl (Microelectron. Reliab., 2004)

A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications. - A. Sozza; Christian Dua; Erwan Morvan; Bertrand Grimbert; Sylvain L. Delage (Microelectron. Reliab., 2005)

Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs. - Michele Piazza; Christian Dua; Mourad Oualli; Erwan Morvan; Dominique Carisetti; Frédéric Wyczisk (Microelectron. Reliab., 2009)

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. - William Vandendaele; Xavier Garros; Thomas Lorin; Erwan Morvan; A. Torres; René Escoffier; Marie-Anne Jaud; Marc Plissonnier; Fred Gaillard (IRPS, 2018)

Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor featuring 2.2W/mm Psat & 41% PAE @28GHz using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique. - A. Divay; Olivier Valorge; Christophe Dubarry; M. Medbouhi; Rémi Franiatte; Daniel Mermin; R. Velard; Y. Gobil; F. Morisot; Erwan Morvan; Ismael Charlet; Luca Lucci; et al. (VLSI Technology and Circuits, 2024)