Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions. - Esteve Amat; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; James H. Stathis (Microelectron. Reliab., 2007)

SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors. - Javier Martín-Martínez; Esteve Amat; M. B. González; P. Verheyen; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; Eddy Simoen (Microelectron. Reliab., 2010)

Analysis of FinFET technology on memories. - Esteve Amat; A. Asenov; Ramon Canal; Binjie Cheng; J.-Ll. Cruz; Zoran Jaksic; Miguel Miranda; Antonio Rubio 001; Paul Zuber (IOLTS, 2012)

Process variability-aware proactive reconfiguration technique for mitigating aging effects in nano scale SRAM lifetime. - Peyman Pouyan; Esteve Amat; Antonio Rubio 001 (VTS, 2012)

Design and implementation of an adaptive proactive reconfiguration technique for SRAM caches. - Peyman Pouyan; Esteve Amat; Francesc Moll; Antonio Rubio 001 (DATE, 2013)

Reliability study on technology trends beyond 20nm. - Esteve Amat; Antonio Calomarde; Antonio Rubio 001 (MIXDES, 2013)

Variability robustness enhancement for 7nm FinFET 3T1D-DRAM cells. - Esteve Amat; Carmen G. Almudéver; Nivard Aymerich; Antonio Rubio 001; Ramon Canal (MWSCAS, 2013)

A single event transient hardening circuit design technique based on strengthening. - Antonio Calomarde; Esteve Amat; Francesc Moll; Antonio Rubio 001 (MWSCAS, 2013)

Systematic and random variability analysis of two different 6T-SRAM layout topologies. - Esteve Amat; E. Amatllé; Sergio Gómez; Nivard Aymerich; Carmen G. Almudéver; Francesc Moll; Antonio Rubio 001 (Microelectron. J., 2013)

Impact of adaptive proactive reconfiguration technique on Vmin and lifetime of SRAM caches. - Peyman Pouyan; Esteve Amat; Enrique Barajas; Antonio Rubio 001 (ISQED, 2014)

Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm. - Esteve Amat; Carmen G. Almudéver; Nivard Aymerich; Ramon Canal; Antonio Rubio 001 (Microelectron. J., 2014)

SET and noise fault tolerant circuit design techniques: Application to 7 nm FinFET. - Antonio Calomarde; Esteve Amat; Francesc Moll; Julio Vigara; Antonio Rubio 001 (Microelectron. Reliab., 2014)

Statistical lifetime analysis of memristive crossbar matrix. - Peyman Pouyan; Esteve Amat; Antonio Rubio 001 (DTIS, 2015)

Memristive crossbar design and test in non-adaptive proactive reconfiguring scheme. - Peyman Pouyan; Esteve Amat; Antonio Rubio 001 (ECCTD, 2015)

UTBB FDSOI technology flexibility for ultra low power internet-of-things applications. - Edith Beigné; Jean-Frédéric Christmann; Alexandre Valentian; Olivier Billoint; Esteve Amat; Dominique Morche (ESSDERC, 2015)

Analysis and design of an adaptive proactive reconfiguration approach for memristive crossbar memories. - Peyman Pouyan; Esteve Amat; Antonio Rubio 001 (NANOARCH, 2015)

Variability Influence on FinFET-Based On-Chip Memory Data Paths. - Esteve Amat; Antonio Calomarde; Ramon Canal; Antonio Rubio 001 (J. Low Power Electron., 2015)

Adaptive Proactive Reconfiguration: A Technique for Process-Variability- and Aging-Aware SRAM Cache Design. - Peyman Pouyan; Esteve Amat; Antonio Rubio 001 (IEEE Trans. Very Large Scale Integr. Syst., 2015)

Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation. - Manish Rana; Ramon Canal; Esteve Amat; Antonio Rubio 001 (IOLTS, 2016)

Monitoring SRAM BTI degradation by current-based tracking technique. - Peyman Pouyan; Esteve Amat; Antonio Rubio 001 (NEWCAS, 2016)

RRAM variability and its mitigation schemes. - Peyman Pouyan; Esteve Amat; Said Hamdioui; Antonio Rubio 001 (PATMOS, 2016)

Feasibility of Embedded DRAM Cells on FinFET Technology. - Esteve Amat; Antonio Calomarde; Francesc Moll; Ramon Canal; Antonio Rubio 001 (IEEE Trans. Computers, 2016)

Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level. - Esteve Amat; Antonio Calomarde; Ramon Canal; Antonio Rubio 001 (PATMOS, 2017)

Resistive Random Access Memory Variability and Its Mitigation Schemes. - Peyman Pouyan; Esteve Amat; Said Hamdioui; Antonio Rubio 001 (J. Low Power Electron., 2017)

Quantum dot location relevance into SET-FET circuits based on FinFET devices. - Esteve Amat; Alberto del Moral; Joan R. Bausells; Francesc Pérez-Murano; Fabian J. Klüpfel (DCIS, 2018)

Modem Gain-Cell Memories in Advanced Technologies. - Esteve Amat; Ramon Canal; Antonio Rubio 001 (IOLTS, 2018)

Optimization of FinFET-Based Gain Cells for Low Power Sub-V T Embedded DRAMs. - Esteve Amat; Antonio Calomarde; Ramon Canal; Antonio Rubio 001 (J. Low Power Electron., 2018)

Memristive Crossbar Memory Lifetime Evaluation and Reconfiguration Strategies. - Peyman Pouyan; Esteve Amat; Antonio Rubio 001 (IEEE Trans. Emerg. Top. Comput., 2018)