Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs. - Ethan S. Lee; Luis Hurtado; Jungwoo Joh; Srikanth Krishnan; Sameer Pendharkar; Jesús A. del Alamo (IRPS, 2019)

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs. - Ethan S. Lee; Jungwoo Joh; Dong-Seup Lee; Jesús A. del Alamo (IRPS, 2022)

Explicit interval estimates for prime numbers. - Michaela Cully-Hugill; Ethan S. Lee (Math. Comput., 2022)

Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors - Ethan S. Lee (2022)

Corrigendum to 'Explicit interval estimates for prime numbers'. - Michaela Cully-Hugill; Ethan S. Lee (Math. Comput., 2023)