High performance high reliability AlN/GaN DHFET. - Farid Medjdoub; Etienne Okada; Bertrand Grimbert; Damien Ducatteau; Riccardo Silvestri; Matteo Meneghini; Enrico Zanoni; Gaudenzio Meneghesso (ESSDERC, 2014)

Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness. - R. Pecheux; R. Kabouche; E. Dogmus; A. Linge; Etienne Okada; M. Zegaoui; Farid Medjdoub (ESSDERC, 2017)

Short-term reliability of high performance Q-band AlN/GaN HEMTs. - Riad Kabouche; Kathia Harrouche; Etienne Okada; Farid Medjdoub (IRPS, 2020)

Large-area femtosecond laser milling of silicon employing trench analysis. - Arun Bhaskar; Justine Philippe; Flavie Braud; Etienne Okada; Vanessa Avramovic; Jean-François Robillard; Cédric Durand; Daniel Gloria; Christophe Gaquière; Emmanuel Dubois 002 (CoRR, 2020)

Design of zero bias power detectors towards power consumption optimization in 5G devices. - Issa Alaji; Walid Aouimeur; Haitham Ghanem; Etienne Okada; Sylvie Lépilliet; Daniel Gloria; Guillaume Ducournau; Christophe Gaquière (Microelectron. J., 2021)

Plasmonic Layer as a Localized Temperature Control Element for Surface Plasmonic Resonance-Based Sensors. - Sivaramakrishnan Ganesan; Sophie Maricot; Jean-François Robillard; Etienne Okada; Mohamed-Taieb Bakouche; Laurent Hay; Jean-Pierre Vilcot (Sensors, 2021)

Temperature compensated power detector towards power consumption optimization in 5G devices. - Issa Alaji; Etienne Okada; Daniel Gloria; Guillaume Ducournau; Christophe Gaquière (Microelectron. J., 2022)

Effect of High Temperature RF Stress on the Trapping Behavior of Carbon Doped AlN/GaN/AlGaN HEMTs. - Lyes Ben Hammou; François Grandpierron; Elodie Carneiro; Katir Ziouche; Etienne Okada; Farid Medjdoub; Gilles Patriarche (IRPS, 2025)