Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor. - Seongho Kim; Young-Keun Park; Gyu Soup Lee; Eui Joong Shin; Woon-San Ko; Hi Deok Lee; Ga-Won Lee 001; Byung Jin Cho (VLSI Technology and Circuits, 2023)