A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface. - Dongku Kang; Minsu Kim 004; Suchang Jeon; Wontaeck Jung; Jooyong Park; Gyo Soo Choo; Dong-Kyo Shim; Anil Kavala; Seungbum Kim; Kyung-Min Kang; Jiyoung Lee; Kuihan Ko; et al. (ISSCC, 2019)