A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques. - Keunsoo Song; Sangkwon Lee; Dongkyun Kim; Youngbo Shim; Sangil Park; Bokrim Ko; Duckhwa Hong; Yongsuk Joo; Wooyoung Lee; Yongdeok Cho; Wooyeol Shin; Jaewoong Yun; et al. (CICC, 2014)

A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques. - Keunsoo Song; Sangkwon Lee; Dongkyun Kim; Youngbo Shim; Sangil Park; Bokrim Ko; Duckhwa Hong; Yongsuk Joo; Wooyoung Lee; Yongdeok Cho; Wooyeol Shin; Jaewoong Yun; et al. (IEEE J. Solid State Circuits, 2015)

23.3 A 4.8Gb/s/pin 2Gb LPDDR4 SDRAM with sub-100µA self-refresh current for IoT applications. - Nohhyup Kwak; Saeng-Hwan Kim; Kyong Ha Lee; Chang-Ki Baek; Mun Seon Jang; Yongsuk Joo; Seung-Hun Lee; Wooyoung Lee; Eunryeong Lee; Donghee Han; Jaeyeol Kang; Jung Ho Lim; et al. (ISSCC, 2017)

A 16Gb 1.2V 3.2Gb/s/pin DDR4 SDRAM with improved power distribution and repair strategy. - Seokbo Shim; Sungho Kim; Jooyoung Bae; Keunsik Ko; Eunryeong Lee; Kwidong Kim; Kyeongtae Kim; Sangho Lee; Jinhoon Hyun; Insung Koh; Joonhong Park; Minjeong Kim; et al. (ISSCC, 2018)