Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics. - Prem K. Kandaswamy; H. Machhadani; E. Bellet-Amalric; L. Nevou; Maria Tchernycheva; L. Lahourcade; Francois H. Julien; Eva Monroy (Microelectron. J., 2009)

PAMBE growth of (1 1 2- 2)-oriented GaN/AlN nanostructures on m-sapphire. - L. Lahourcade; Julien Renard; Prem K. Kandaswamy; Bruno Gayral; M. P. Chauvat; Prem Ruterana; Eva Monroy (Microelectron. J., 2009)

Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations. - S. Leconte; L. Gerrer; Eva Monroy (Microelectron. J., 2009)

Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 µm. - Fernando Bernabé Naranjo; Miguel González-Herráez; Sirona Valdueza-Felip; H. Fernández; Javier Solis; Susana Fernández; Eva Monroy; J. Grandal; M. A. Sánchez-García (Microelectron. J., 2009)

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures. - Daniel Hofstetter; Esther Baumann; Fabrizio Raphael Giorgetta; Ricardo Théron; Hong Wu; William J. Schaff; Jahan Dawlaty; Paul A. George; Lester F. Eastman; Farhan Rana; Prem K. Kandaswamy; Fabien Guillot; et al. (Proc. IEEE, 2010)

Sub-250 fs, 650 kW Peak Power Harmonic Mode-Locked Fiber Laser with InN-based SESAM. - Francesca Gallazzi; Marco Jimenez-Rodriguez; Eva Monroy; Pedro Corredera; Miguel González-Herráez; Fernando Bernabé Naranjo; Juan Diego Ania-Castañón (ECOC, 2017)

Nitride-based devices at telecom wavelengths. - Eva Monroy (OFC, 2017)