Top-gated atomic precision phosphorous doped silicon single electron transistor with low thermal budget gate dielectric. - Evan M. Anderson; Leon Maurer; Lisa A. Tracy; S. W. Smith; Ping Lu; Aaron M. Katzenmeyer; Andrew D. Baczewski; DeAnna M. Campbell; Michael T. Marshall; Dan R. Ward; Tzu-Ming Lu; Shashank Misra (DRC, 2019)