Prospects for High-Efficiency Silicon and lll-V Power Amplifiers and Transmitters in 100-300 GHz Bands. - James F. Buckwalter; Mark J. W. Rodwell; Kang Ning 002; Ahmed S. H. Ahmed; Andrea Arias-Purdue; Jeff Chien; Everett O'Malley; Eythan Lam (CICC, 2021)

An 18.6-dBm, 8-Way-Combined D-Band Power Amplifier with 21.6% PAE in 22-nm FD-SOI CMOS. - Jeff Shih-Chieh Chien; Eythan Lam; James F. Buckwalter (BCICTS, 2023)

A Two-stage, Two-way-combined, 220-GHz Power Amplifier With 17.1% PAE in a 250-nm InP HBT Process. - Eythan Lam; Jeff Shieh-Chieh Chien; Petra Rowell; Miguel Urteaga; James F. Buckwalter (BCICTS, 2024)