Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation. - F. Boige; Frédéric Richardeau (Microelectron. Reliab., 2017)

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. - F. Boige; Frédéric Richardeau; David Trémouilles; Stéphane Lefebvre; G. Guibaud (Microelectron. Reliab., 2017)

Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. - F. Boige; Frédéric Richardeau; Stéphane Lefebvre; Jean-Marc Blaquière; G. Guibaud; A. Bourennane (Microelectron. Reliab., 2018)

SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation. - F. Boige; Frédéric Richardeau; Stéphane Lefebvre; Marc Cousineau (Math. Comput. Simul., 2019)