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Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. - C.-Y. Liao; K.-Y. Hsiang; Z.-F. Lou; H.-C. Tseng; C.-Y. Lin; Z.-X. Li; F.-C. Hsieh; C. C. Wang; F.-S. Chang; W.-C. Ray; Y.-Y. Tseng; Shu-Tong Chang; et al. (VLSI Technology and Circuits, 2022)