Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. - Fabrizio Masin; Carlo De Santi; Arno Stockman; J. Lettens; F. Geenen; Gaudenzio Meneghesso; Enrico Zanoni; Peter Moens; Matteo Meneghini (IRPS, 2022)

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. - Peter Moens; F. Geenen; L. De Schepper; JF Cano; J. Lettens; S. Maslougkas; J. Franchi; Martin Domeij (IRPS, 2023)

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. - M. Avramenko; L. De Schepper; J.-F. Cano; F. Geenen; Peter Moens; Alberto Marcuzzi; Carlo De Santi; Matteo Meneghini (IRPS, 2024)

Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. - Alberto Marcuzzi; M. Avramenko; Carlo De Santi; Peter Moens; F. Geenen; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2024)

On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs. - Peter Moens; F. Geenen; M. Avramenko; G. Gomez-Garcia; Kevin Matocha (IRPS, 2024)