Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses. - V. S. Pershenkov; Miguel Ullán; M. Wilder; H. Spieler; E. Spencer; S. Rescia; F. M. Newcomer; F. Martinez-McKinney; W. Kononenko; A. A. Grillo; S. Díez (Microelectron. Reliab., 2014)