Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. - M. Barlas; Boubacar Traore; Laurent Grenouillet; Stefania Bernasconi; Philippe Blaise; Mouhamad Alayan; Benoit Sklénard; Eric Jalaguier; Philippe Rodriguez; F. Mazen; E. Vilain; M. Guillermet; et al. (ESSDERC, 2016)

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. - Laurent Grenouillet; Niccolo Castellani; Alain Persico; Valentina Meli; Simon Martin 006; Olivier Billoint; R. Segaud; Stefania Bernasconi; C. Pellissier; Carine Jahan; Christelle Charpin-Nicolle; P. Dezest; et al. (IMW, 2021)

Engineered SiC materials for power technologies. - Walter Schwarzenbach; S. Rouchier; G. Berre; R. Boulet; O. Ledoux; Enrica Cela; Alexis Drouin; A. Chapelle; S. Monnoye; H. Biard; K. Alassaad; L. Viravaux; et al. (ICICDT, 2022)

Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications. - Daphnée Bosch; Abygaël Viey; Tadeu Mota Frutuoso; P. Lheritier; C. Licitra; Nada Zerhouni; A. Albouy; Laurent Brunet; A. Magalhaes-Lucas; L. M. B. da Silva; H. Boutry; M. Husien Fahmy Taha Abdelrahman; et al. (VLSI Technology and Circuits, 2024)