High field stress at and above room temperature in 2.3 nm thick oxides. - Damien Zander; Christian Petit; F. Saigné; A. Meinertzhagen (Microelectron. Reliab., 2001)

Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides. - D. Zander; F. Saigné; A. Meinertzhagen (Microelectron. Reliab., 2001)

Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurements. - F. Saigné; Olivier Quittard; Laurent Dusseau; F. Joffre; Coumar Oudéa; J. Fesquet; Jean Gasiot (Microelectron. Reliab., 2002)

Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices. - Damien Zander; F. Saigné; A. Meinertzhagen; Christian Petit (Microelectron. Reliab., 2003)