Effects of Ge profiles on base transit time and base resistance of SiGe HBT's. - J. Song; J. S. Yuan; F. Schwierz; D. Schipanski (ICECS, 1996)

Semiconductor devices for RF applications: evolution and current status. - F. Schwierz; Juin J. Liou (Microelectron. Reliab., 2001)

Simulation of boron diffusion in Si and strained SiGe layers. - R. Kinder; F. Schwierz; P. Beno; J. Geßner (Microelectron. J., 2007)

Performance trends of Si-based RF transistors. - F. Schwierz; C. Schippel (Microelectron. Reliab., 2007)