Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. - Fabian Horst; Michael Graef; Fabian Hosenfeld; Atieh Farokhnejad; Franziska Hain; Gia Vinh Luong; Qing-Tai Zhao; Benjamín Iñíguez; Alexander Kloes (ESSDERC, 2016)

Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs. - Michael Graef; Franziska Hain; Fabian Hosenfeld; Fabian Horst; Atieh Farokhnejad; Alexander Kloes; Benjamín Iñíguez (MIXDES, 2016)

Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs. - Fabian Hosenfeld; Michael Graef; Fabian Horst; Alexander Kloes; Benjamín Iñíguez; François Lime (MIXDES, 2016)

Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs. - Michael Graef; Franziska Hain; Fabian Hosenfeld; Fabian Horst; Atieh Farokhnejad; Benjamín Iñíguez; Alexander Kloes (MIXDES, 2017)

Non-iterative NEGF based model for band-to-band tunneling current in DG TFETs. - Fabian Hosenfeld; Fabian Horst; Alexander Kloes; Benjamín Iñíguez; François Lime (MIXDES, 2017)